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1.76 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMT6017LFDF-13 by Diodes Incorporated

DMT6017LFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.76 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 50 A;

18 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

65 V

8.1 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

29 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.76 W

50 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN2024UDH-7 by Diodes Incorporated

DMN2024UDH-7

Diodes Incorporated

DMN2024UDH-7 by Diodes Inc. is an N-channel FET with 20V DS breakdown voltage, 45A IDM, and 0.023 ohm RDS(on). Commonly used for switching applications in a small outline package with 8 terminals. Operating range from -55 to 150 °C, MIL-STD-202 compliant.

8 mJ

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

5.2 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

S-PDSO-N8

e4

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.76 W

45 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON