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1.74 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NID9N05ACLT4G by Onsemi

NID9N05ACLT4G

Onsemi

NID9N05ACLT4G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating from -55 to 175 °C, it offers fast ton of 950ns and toff of 3850ns.

LOGIC LEVEL COMPATIBLE

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.74 W

35 A

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3850 ns

950 ns

NID9N05BCLT4G by Onsemi

NID9N05BCLT4G

Onsemi

NID9N05BCLT4G by Onsemi is a single N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max operating temperature of 175 °C. This MOSFET has a package style of small outline and terminal finish of matte tin, making it suitable for high-power applications.

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.74 W

35 A

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3850 ns

950 ns