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1.69 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NIF9N05CLT1 by Onsemi

NIF9N05CLT1

Onsemi

NIF9N05CLT1 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max temp of 150 °C, making it ideal for various power control circuits.

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NIF9N05CLT3 by Onsemi

NIF9N05CLT3

Onsemi

NIF9N05CLT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. Ideal for use in circuits requiring high power dissipation and efficient switching capabilities.

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NIF9N05CLT1G by Onsemi

NIF9N05CLT1G

Onsemi

NIF9N05CLT1G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 10A IDM, and 0.125 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with GULL WING terminals, suitable for ENHANCEMENT MODE operation at up to 150 °C.

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NIF9N05CLT3G by Onsemi

NIF9N05CLT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.69 W; Avalanche Energy Rating (EAS): 110 mJ; Package Style (Meter): SMALL OUTLINE;

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON