Loading...

1.56 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD70N03R-1G by Onsemi

NTD70N03R-1G

Onsemi

NTD70N03R-1G by Onsemi is a Power FET with N-CHANNEL configuration, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 25V, Max Pulsed Drain Current of 140A, and Max Operating Temperature of 150 °C. The transistor has a Max Drain Current of 32A and Max Drain-Source On Resistance of 0.013 ohm.

71.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

62.8 A

32 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

1.56 W

140 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD70N03RT4G by Onsemi

NTD70N03RT4G

Onsemi

NTD70N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 140A, Max Operating Temperature of 175°C, and Max Drain Current of 32A. With a low on-resistance of 0.013 ohm, this transistor is ideal for high-power switching circuits in various electronic devices.

71.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

62.8 A

32 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

140 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD70N03RG by Onsemi

NTD70N03RG

Onsemi

NTD70N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 140A, Max Operating Temperature of 150 °C, and Max Drain Current of 32A. This MOSFET has a low on-resistance of 0.013 ohm and is designed for surface mount installation in various electronic devices.

71.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

62.8 A

32 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

140 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON