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1.36 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD20N06LT4 by Onsemi

NTD20N06LT4

Onsemi

NTD20N06LT4 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 175 °C Operating Temperature.

128 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.048 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.36 W

60 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD24N06L by Onsemi

NTD24N06L

Onsemi

NTD24N06L by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max drain current of 24A, min DS breakdown voltage of 60V, and peak reflow temperature of 235 °C. This MOSFET operates in enhancement mode with a low on-resistance of 0.045 ohm, making it suitable for high-power applications.

LOGIC LEVEL COMPATIBLE

162 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

24 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.36 W

72 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD24N06LG by Onsemi

NTD24N06LG

Onsemi

NTD24N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 24A Drain Current, and 0.045 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 175 °C.

LOGIC LEVEL COMPATIBLE

162 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

24 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.36 W

72 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTD24N06L-1G by Onsemi

NTD24N06L-1G

Onsemi

NTD24N06L-1G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 24A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 1.36W at 175 °C.

LOGIC LEVEL COMPATIBLE

162 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

24 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.36 W

72 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMN3055LFDBQ-13 by Diodes Incorporated

DMN3055LFDBQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Maximum Drain Current (ID): 5 A; Package Body Material: PLASTIC/EPOXY;

6 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

5 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

44 pF

S-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.36 W

25 A

AEC-Q101; IATF 16949

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON