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.71 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMD2P01R2 by Onsemi

NTMD2P01R2

Onsemi

NTMD2P01R2 by Onsemi is a P-CHANNEL FET with 16V DS Breakdown Voltage, 9A IDM, and 0.1 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE with 2 elements and built-in diode. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.

LOGIC LEVEL COMPATIBLE

350 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

16 V

2.3 A

2.3 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.71 W

9 A

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTMD2P01R2G by Onsemi

NTMD2P01R2G

Onsemi

NTMD2P01R2G by Onsemi is a P-CHANNEL FET with 16V DS breakdown voltage, 9A IDM, and 0.1 ohm RDS(on). It's used for switching applications in small outline packages with 8 terminals.

LOGIC LEVEL COMPATIBLE

350 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

16 V

2.3 A

2.3 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.71 W

9 A

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON