Loading...

.5 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NDS355AN-NB9L007A by Fairchild Semiconductor

NDS355AN-NB9L007A

Fairchild Semiconductor

NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.

SINGLE

1.7 A

1.7 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.5 W

FET General Purpose Power

YES

Tin (Sn)

30

SN7002WE6433 by Infineon Technologies

SN7002WE6433

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .23 A;

SINGLE

.23 A

.23 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.5 W

FET General Purpose Power

YES

SN7002WE6327 by Infineon Technologies

SN7002WE6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .23 A;

SINGLE

.23 A

.23 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.5 W

FET General Purpose Power

YES