Loading...

.36 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BF351 by Texas Instruments

BF351

Texas Instruments

Texas Instruments BF351 is a N-CHANNEL FET with 0.05A Max Drain Current and 0.36W Max Power Dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 175°C.

SINGLE

.05 A

.05 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

N-CHANNEL

.36 W

FET General Purpose Power

NO

BF352 by Texas Instruments

BF352

Texas Instruments

Texas Instruments' BF352 is a N-CHANNEL FET with 0.05A max drain current and 0.36W max power dissipation. Ideal for applications requiring high temperature resistance up to 175°C, such as power management systems and industrial control circuits.

SINGLE

.05 A

.05 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

N-CHANNEL

.36 W

FET General Purpose Power

NO

SN7002NE6433 by Infineon Technologies

SN7002NE6433

Infineon Technologies

Infineon's SN7002NE6433 is a N-CHANNEL FET with 0.2A max drain current and 0.36W power dissipation in single configuration. Ideal for applications requiring enhancement mode operation, such as power management systems or battery protection circuits.

SINGLE

.2 A

.2 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.36 W

FET General Purpose Power

YES

BSS169E6906 by Infineon Technologies

BSS169E6906

Infineon Technologies

BSS169E6906 by Infineon is a N-CHANNEL FET with 0.17A max drain current and 0.36W power dissipation in depletion mode. Ideal for applications requiring high temperature resistance up to 150°C, such as power management systems and battery protection circuits.

SINGLE

.17 A

.17 A

METAL-OXIDE SEMICONDUCTOR

1

DEPLETION MODE

150 Cel

N-CHANNEL

.36 W

FET General Purpose Power

YES