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.35 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
2N3819-D27Z by Fairchild Semiconductor

2N3819-D27Z

Fairchild Semiconductor

2N3819-D27Z by Fairchild Semiconductor is a N-CHANNEL power FET with a max drain current of 0.05 A and max power dissipation of 0.35 W. It operates in enhancement mode and uses metal-oxide semiconductor technology. It is commonly used in applications requiring low-power switching or amplification.

SINGLE

.05 A

.05 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.35 W

FET General Purpose Power

NO

Matte Tin (Sn)

PMF77XN,115 by NXP Semiconductors

PMF77XN,115

NXP Semiconductors

PMF77XN,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 1.63 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.

SINGLE

1.63 A

1.63 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.35 W

FET General Purpose Power

YES