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SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
MLD1N06CLT4G by Onsemi

MLD1N06CLT4G

Onsemi

MLD1N06CLT4G by Onsemi is a N-CHANNEL Power FET with 59V DS Breakdown Voltage and 1.8A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 40W at 150 °C temperature.

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

59 V

2 A

1 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

40 W

1.8 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

MLD2N06CLT4G by Onsemi

MLD2N06CLT4G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

80 mJ

DRAIN

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

58 V

2 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

40 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

MLP1N06CLG by Onsemi

MLP1N06CLG

Onsemi

The Onsemi MLP1N06CLG is a N-CHANNEL Power FET with 59V DS Breakdown Voltage and 2.75A Drain Current. Ideal for SWITCHING applications, it features a built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE at up to 150 °C, it has a max power dissipation of 30W.

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

59 V

2.75 A

2.75 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

30 W

1.8 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON