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SERIES, 2 ELEMENTS Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STL60N32N3LL by STMicroelectronics

STL60N32N3LL

STMicroelectronics

STL60N32N3LL by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its no-lead surface mount package.

DRAIN

SERIES, 2 ELEMENTS

30 V

60 A

32 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N4

e3

3

2

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

48 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

NO LEAD

DUAL

30

SWITCHING

SILICON