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SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTL4502NT1 by Onsemi

NTL4502NT1

Onsemi

NTL4502NT1 by Onsemi is a N-CHANNEL FET with 4 separate elements, built-in diode, and 24V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 32A and 0.013 ohm max drain-source resistance. Operating in enhancement mode, it features a peak reflow temp of 235 °C and can handle up to 11.4A drain current.

80 mJ

DRAIN

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

24 V

11.4 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

S-XQCC-N16

e0

4

16

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

235

N-CHANNEL

32 A

Not Qualified

FET General Purpose Powers

YES

TIN LEAD

NO LEAD

QUAD

SWITCHING

SILICON