Loading...

CURRENT MIRROR WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NILMS4501NR2G by Onsemi

NILMS4501NR2G

Onsemi

NILMS4501NR2G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 14A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it has a 175 °C Max Operating Temp and 50mJ EAS rating.

50 mJ

DRAIN

CURRENT MIRROR WITH BUILT-IN DIODE

24 V

9.5 A

9.5 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

2.7 W

14 A

Not Qualified

FET General Purpose Power

YES

TIN

NO LEAD

BOTTOM

SWITCHING

SILICON