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COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTLTD7900ZR2G by Onsemi

NTLTD7900ZR2G

Onsemi

NTLTD7900ZR2G by Onsemi is an N-CHANNEL FET with 2 elements, built-in diode and resistor. It has a max pulsed drain current of 30A and min DS breakdown voltage of 20V. Ideal for switching applications, this transistor operates in enhancement mode with a max power dissipation of 3.2W at a max temp of 150 °C.

ESD PROTECTED

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

6 A

6 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.2 W

30 A

Not Qualified

FET General Purpose Power

YES

TIN

NO LEAD

DUAL

SWITCHING

SILICON

EFC3J018NUZTDG by Onsemi

EFC3J018NUZTDG

Onsemi

EFC3J018NUZTDG by Onsemi is a N-CHANNEL FET with COMMON DRAIN configuration, ideal for SWITCHING applications. It features 2 ELEMENTS with built-in DIODE and RESISTOR, operating in DEPLETION MODE. With a max power dissipation of 2.5W and max temperature of 150°C, it is suitable for various power management tasks.

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N6

2

6

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.5 W

YES

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN3008SCP10-7 by Diodes Incorporated

DMN3008SCP10-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;

ESD PROTECTED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N10

e4

1

2

10

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

2.7 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

EFC2K101NUZTDG by Onsemi

EFC2K101NUZTDG

Onsemi

EFC2K101NUZTDG by Onsemi is a N-CHANNEL Power FET with COMMON DRAIN configuration. It features 2 elements, built-in diode and resistor, suitable for SWITCHING applications. Operating in DEPLETION MODE, it has a max power dissipation of 1.4W and can withstand temperatures from -55 to 150 °C.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N6

2

6

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

1.4 W

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON