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BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
VWM270-0075X2 by IXYS Corporation

VWM270-0075X2

IXYS Corporation

IXYS Corporation's VWM270-0075X2 is a N-CHANNEL FET with 6 elements in bridge configuration. It has a DS Breakdown Voltage of 75V, Drain Current of 270A, and On Resistance of 0.0021 ohm. Ideal for switching applications due to its high current capacity and low on-resistance.

ISOLATED

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

75 V

270 A

270 A

.0021 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X17

6

17

ENHANCEMENT MODE

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

VWM350-0075P by IXYS Corporation

VWM350-0075P

IXYS Corporation

IXYS Corporation's VWM350-0075P is a N-CHANNEL FET with 6 elements in bridge configuration. It operates in enhancement mode, with 75V DS breakdown voltage and 340A max drain current. Ideal for switching applications due to low 0.0033 ohm RDS(on) and isolated case connection.

ISOLATED

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

75 V

340 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X24

e3

6

24

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

MATTE TIN

UNSPECIFIED

UPPER

SWITCHING

SILICON