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3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
CCS050M12CM2 by Wolfspeed

CCS050M12CM2

Wolfspeed

Wolfspeed's CCS050M12CM2 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring 6 elements in a rectangular package style, it offers 250A max pulsed drain current and 0.036 ohm max RDS(on). Operating in enhancement mode at -40°C, this MOSFET uses silicon carbide technology and meets IEC-60747-8-4 standards.

ISOLATED

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

87 A

.036 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X28

6

28

ENHANCEMENT MODE

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 A

IEC-60747-8-4

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

FS03MR12A6MA1LB by Infineon Technologies

FS03MR12A6MA1LB

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Transistor Element Material: SILICON CARBIDE; Transistor Application: SWITCHING; No. of Terminals: 39;

ISOLATED

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

170 pF

R-XUFM-X39

6

39

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

800 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE