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200 MHz Power Bipolar Junction Transistors (BJT) 7

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTE2322 by Nte Electronics

NTE2322

Nte Electronics

NTE2322 by Nte Electronics is a PNP BJT with 4 elements, ideal for amplifier applications. Features include hFE of 30, VCE of 40V, and fT of 200MHz. The package style is in-line with 14 terminals in a rectangular shape for through-hole mounting.

.6 A

40 V

SEPARATE, 4 ELEMENTS

30

R-PDIP-T14

4

14

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

Not Qualified

NO

THROUGH-HOLE

DUAL

AMPLIFIER

SILICON

200 MHz

DCP69-16-13 by Diodes Incorporated

DCP69-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

DCP69-25-13 by Diodes Incorporated

DCP69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

2SC5171,Q(J by Toshiba

2SC5171,Q(J

Toshiba

2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.

ISOLATED

2 A

180 V

SINGLE

50

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

200 MHz

PZT2907A/ZLF by Nexperia

PZT2907A/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 4;

COLLECTOR

.6 A

60 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-134

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

PZT2907A/ZLX by Nexperia

PZT2907A/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Reference Standard: IEC-134;

COLLECTOR

.6 A

60 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-134

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

MPQ2222APBFREE by Central Semiconductor

MPQ2222APBFREE

Central Semiconductor

MPQ2222APBFREE by Central Semiconductor is a NPN Power BJT with 4 separate elements. It has a max VCEsat of 0.3V, ideal for switching applications. With a max VCE of 40V and fT of 200MHz, it's suitable for high-speed circuits in various electronic devices.

8 pF

40 V

SEPARATE, 4 ELEMENTS

40

TO-116

R-PDIP-T14

e3

4

14

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

3 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

DUAL

SWITCHING

SILICON

200 MHz

.3 V