.2 MHz Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)

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    • DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
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    • SEPARATE, 2 ELEMENTS
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    • SINGLE
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    • .43 MHz
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    • 18 MHz
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    • 28.4 MHz
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    • 70 MHz
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    • .00125 W
    • .00181 W
    • .35 W
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    • 1 W
    • 1.1 W
    • 1.16 W
    • 1.18 W
    • 1.2 W
    • 1.25 W
    • 1.28 W
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    • 1.31 W
    • 1.33 W
    • 1.34 W
    • 1.35 W
    • 1.37 W
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    • 1.54 W
    • 1.56 W
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    • 1.65 W
    • 1.67 W
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    • 1.75 W
    • 1.8 W
    • 1.81 W
    • 1.96 W
    • 10 W
    • 10.2 W
    • 100 W
    • 105 W
    • 106 W
    • 110 W
    • 113 W
    • 114 W
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    • 117 W
    • 118 W
    • 12 W
    • 12.5 W
    • 12.8 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 135 W
    • 1380 W
    • 140 W
    • 15 W
    • 15.7 W
    • 150 W
    • 155 W
    • 156 W
    • 16 W
    • 160 W
    • 165 W
    • 166 W
    • 170 W
    • 175 W
    • 178 W
    • 18 W
    • 180 W
    • 19.2 W
    • 190 W
    • 2 W
    • 2.1 W
    • 2.2 W
    • 2.27 W
    • 2.3 W
    • 2.45 W
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    • 2.6 W
    • 2.7 W
    • 2.75 W
    • 2.8 W
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    • 208 W
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    • 23 W
    • 230 W
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    • 25 W
    • 250 W
    • 26 W
    • 26.3 W
    • 26.6 W
    • 26.7 W
    • 27.8 W
    • 270 W
    • 28 W
    • 290 W
    • 3 W
    • 3.3 W
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    • 3.8 W
    • 3.9 W
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    • 35.7 W
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    • 4.2 W
    • 40 W
    • 400 W
    • 42 W
    • 43 W
    • 44 W
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    • 46 W
    • 48 W
    • 5 W
    • 5.7 W
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    • 52 W
    • 54 W
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    • 57 W
    • 58 W
    • 6 W
    • 60 W
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    • 65 W
    • 67 W
    • 7 W
    • 7.3 W
    • 7.8 W
    • 70 W
    • 75 W
    • 8 W
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    • 80 W
    • 83 W
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    • 87.5 W
    • 88 W
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    • .02 A
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    • .14 A
    • .15 A
    • .2 A
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    • .5 A
    • .6 A
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    • .75 A
    • .8 A
    • 1 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.5 A
    • 1.6 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 100 A
    • 11 A
    • 12 A
    • 120 A
    • 13 A
    • 14 A
    • 140 A
    • 15 A
    • 150 A
    • 16 A
    • 160 A
    • 17 A
    • 18 A
    • 2 A
    • 2.5 A
    • 20 A
    • 200 A
    • 21 A
    • 210 A
    • 22 A
    • 23 A
    • 24 A
    • 25 A
    • 250 A
    • 26 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.5 A
    • 30 A
    • 300 A
    • 35 A
    • 36 A
    • 4 A
    • 4.3 A
    • 4.5 A
    • 40 A
    • 400 A
    • 42 A
    • 45 A
    • 48 A
    • 5 A
    • 5.25 A
    • 5.5 A
    • 5.7 A
    • 50 A
    • 500 A
    • 56 A
    • 6 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 600 A
    • 67 A
    • 7 A
    • 7.5 A
    • 70 A
    • 72 A
    • 75 A
    • 8 A
    • 80 A
    • 800 A
    • 84 A
    • 9 A
    • 90 A
    • 96 A
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N3772G by Onsemi

2N3772G

Onsemi

2N3772G by Onsemi is a NPN BJT transistor with 150W power dissipation, 60V max collector-emitter voltage, and 20A max collector current. Ideal for switching applications due to its single configuration and -65°C to 200°C operating temperature range.

COLLECTOR

20 A

60 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

.2 MHz

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