.08 MHz Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)

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    • .00125 W
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    • 1380 W
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    • 15.7 W
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    • .02 A
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    • 20 A
    • 200 A
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    • 210 A
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    • 26 A
    • 28 A
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    • 30 A
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    • 36 A
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    • 4.3 A
    • 4.5 A
    • 40 A
    • 400 A
    • 42 A
    • 45 A
    • 48 A
    • 5 A
    • 5.25 A
    • 5.5 A
    • 5.7 A
    • 50 A
    • 500 A
    • 56 A
    • 6 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 600 A
    • 67 A
    • 7 A
    • 7.5 A
    • 70 A
    • 72 A
    • 75 A
    • 8 A
    • 80 A
    • 800 A
    • 84 A
    • 9 A
    • 90 A
    • 96 A
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N3442G by Onsemi

2N3442G

Onsemi

The Onsemi 2N3442G is a NPN power BJT with max. collector-emitter voltage of 140V and max. collector current of 10A, ideal for switching applications. It has a min. DC current gain of 7.5 and can dissipate up to 117W power, suitable for high-power requirements in various electronic systems. With a max operating temperature of 200°C, it offers reliable performance in demanding environments.

COLLECTOR

10 A

140 V

SINGLE

7.5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

117 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

.08 MHz

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