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230 W Power Bipolar Junction Transistors (BJT) 2

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MJL4281A by Onsemi

MJL4281A

Onsemi

The Onsemi MJL4281A is a NPN BJT transistor with 230W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 350V, max collector current of 15A, and min DC current gain of 10. The package style is flange mount with through-hole terminals in a rectangular shape.

15 A

350 V

SINGLE

10

TO-264AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

230 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

35 MHz

MJL4302A by Onsemi

MJL4302A

Onsemi

The Onsemi MJL4302A is a PNP BJT transistor with 230W power dissipation, 350V max. collector-emitter voltage, and 15A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

15 A

350 V

SINGLE

10

TO-264AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

230 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

35 MHz