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225 W Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ESM3030DV by STMicroelectronics

ESM3030DV

STMicroelectronics

ESM3030DV by STMicroelectronics is a NPN power bipolar junction transistor (BJT) with a max VCEsat of 2.2V and max collector current (IC) of 100A. It is commonly used for switching applications due to its built-in diode and fast fall time of 600ns.

ISOLATED

100 A

300 V

DARLINGTON WITH BUILT-IN DIODE

600 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

225 W

225 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2.2 V