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21 W Power Bipolar Junction Transistors (BJT) 2

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STP08IE120F4 by STMicroelectronics

STP08IE120F4

STMicroelectronics

STP08IE120F4 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for efficient power management in electronic circuits.

ISOLATED

8 A

SINGLE WITH BUILT-IN FET AND DIODE

5

TO-220

R-PSFM-T4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

NPN

21 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

STP12IE90F4 by STMicroelectronics

STP12IE90F4

STMicroelectronics

STP12IE90F4 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 12A collector current, and operates at temperatures up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

ISOLATED

12 A

SINGLE WITH BUILT-IN FET AND DIODE

5

TO-220

R-PSFM-T4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

21 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON