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2.27 W Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NSV60200DMTWTBG by Onsemi

NSV60200DMTWTBG

Onsemi

NSV60200DMTWTBG by Onsemi is a PNP BJT transistor with VCEsat of 0.45V, hFE of 40, and IC of 2A. Ideal for switching applications, it has a max operating temp of 150 °C and collector-emitter voltage of 60V. Suitable for surface mount with small outline package style.

COLLECTOR

2 A

18 pF

60 V

SEPARATE, 2 ELEMENTS

40

S-PDSO-N6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

PNP

1.8 W

2.27 W

AEC-Q101

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

155 MHz

.45 V