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12.5 W Power Bipolar Junction Transistors (BJT) 3

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD135G by Onsemi

BD135G

Onsemi

The Onsemi BD135G is a NPN BJT transistor with 45V VCE, 1.5A IC, and 12.5W Ptot. Ideal for amplifier applications, it operates b/w -55°C to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

1.5 A

45 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

12.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

ST600K by STMicroelectronics

ST600K

STMicroelectronics

ST600K by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages up to 120V. Ideal for efficient power management in electronic circuits.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

12.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST631K by STMicroelectronics

ST631K

STMicroelectronics

ST631K by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Ideal for efficient circuit designs in various electronic devices.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

12.5 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON