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1.25 W Power Bipolar Junction Transistors (BJT) 3

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD135TG by Onsemi

BD135TG

Onsemi

The Onsemi BD135TG is a NPN BJT with max power dissipation of 1.25W, hFE of 40, and IC of 1.5A. Ideal for power applications where a single configuration is needed, operating up to 150 °C.

1.5 A

SINGLE

40

e3

1

150 Cel

NPN

1.25 W

Other Transistors

NO

MATTE TIN

ZTN23015CFHQTA by Diodes Incorporated

ZTN23015CFHQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 235 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 6 A;

6 A

56 pF

15 V

SINGLE

150

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.25 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

235 MHz

.18 V

ZTP25040DFHQTA by Diodes Incorporated

ZTP25040DFHQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 3 A;

3 A

17.4 pF

40 V

SINGLE

30

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.25 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

270 MHz

.22 V