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1.16 W Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N2222AUATXV by Tt Electronics Plc

2N2222AUATXV

Tt Electronics Plc

2N2222AUATXV by Tt Electronics Plc is a NPN BJT transistor with VCEsat of 1V, hFE of 100, and IC of 0.8A. Ideal for switching applications, it has a max operating temp of 200°C and TOFF of 300ns. Its small outline package makes it suitable for various electronic designs.

.8 A

8 pF

50 V

SINGLE

100

R-CDSO-N4

1

4

200 Cel

-65 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

1.16 W

MIL-19500

YES

NO LEAD

DUAL

SWITCHING

SILICON

300 ns

35 ns

1 V