Loading...

3.2 A Power Bipolar Junction Transistors (BJT) 6

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
IGB01N120H2ATMA1 by Infineon Technologies

IGB01N120H2ATMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3.2 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 1200 V;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IGD01N120H2BUMA1 by Infineon Technologies

IGD01N120H2BUMA1

Infineon Technologies

Infineon's IGD01N120H2BUMA1 is a NPN BJT transistor with 1200V VCE, 3.2A IC, and 150°C max operating temp. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

3.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

e3

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IGP01N120H2XKSA1 by Infineon Technologies

IGP01N120H2XKSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.2 A; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Terminal Position: SINGLE;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

APT13005SI-G1 by Diodes Incorporated

APT13005SI-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

3.2 A

450 V

SINGLE

11

TO-251

R-PSIP-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005STF-G1 by Diodes Incorporated

APT13005STF-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

ISOLATED

3.2 A

450 V

SINGLE

11

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005SU-G1 by Diodes Incorporated

APT13005SU-G1

Diodes Incorporated

Diodes Inc.'s APT13005SU-G1 is a NPN BJT transistor with max. collector-emitter voltage of 450V, ideal for switching applications. With a max. collector current of 3.2A and transition frequency of 4MHz, it operates b/w -65 to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

3.2 A

450 V

SINGLE

11

TO-126

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz