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.1 A Power Bipolar Junction Transistors (BJT) 2

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
KSC5042MSTU by Fairchild Semiconductor

KSC5042MSTU

Fairchild Semiconductor

KSC5042MSTU by Fairchild Semiconductor is a NPN Power BJT with 900V VCEO, 0.1A IC, and 4W Ptot. Ideal for switching applications due to its single configuration and hFE of 30. Features through-hole terminals in a rectangular package suitable for flange mounting.

HIGH RELIABILITY

.1 A

900 V

SINGLE

30

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BF720T3G by Onsemi

BF720T3G

Onsemi

BF720T3G by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it has a max power dissipation of 1.5W in a small outline package suitable for surface mount technology.

COLLECTOR

.1 A

300 V

SINGLE

50

TO-261AA

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

60 MHz