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Renesas Electronics Other Function Transistors 28

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2SC4957-A by Renesas Electronics

2SC4957-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

2SC4957-T1-A by Renesas Electronics

2SC4957-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

NE687M33-A by Renesas Electronics

NE687M33-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

NE687M33-T3-A by Renesas Electronics

NE687M33-T3-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

2SC4227-T1-A by Renesas Electronics

2SC4227-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 40;

.065 A

SINGLE

40

1

150 Cel

NPN

.15 W

Other Transistors

YES

NE856M02-T1-AZ by Renesas Electronics

NE856M02-T1-AZ

Renesas Electronics

NE856M02-T1-AZ by Renesas Electronics is an NPN transistor with a max power dissipation of 1.2W and min DC current gain of 50. It operates at a max temperature of 150°C, making it suitable for various applications requiring a single configuration surface mount transistor with a collector current of 0.1A.

.1 A

SINGLE

50

1

150 Cel

NPN

1.2 W

Other Transistors

YES

NE856M03-A by Renesas Electronics

NE856M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

80

1

150 Cel

NPN

.125 W

Other Transistors

YES

3000 MHz

NE685M03-A by Renesas Electronics

NE685M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE685M03-T1-A by Renesas Electronics

NE685M03-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE461M02-T1-AZ by Renesas Electronics

NE461M02-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; No. of Elements: 1;

.25 A

SINGLE

40

1

150 Cel

NPN

2 W

Other Transistors

YES

NE58219-T1-A by Renesas Electronics

NE58219-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;

.06 A

SINGLE

60

1

125 Cel

NPN

.1 W

Other Transistors

YES

3000 MHz

NE696M01-T1-A by Renesas Electronics

NE696M01-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Minimum DC Current Gain (hFE): 80;

.03 A

SINGLE

80

1

150 Cel

NPN

.15 W

Other Transistors

YES

NE678M04-T2-A by Renesas Electronics

NE678M04-T2-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 75;

.1 A

75

150 Cel

NPN

.205 W

Other Transistors

YES

NE677M04-T2-A by Renesas Electronics

NE677M04-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

.05 A

SINGLE

75

1

150 Cel

NPN

.205 W

Other Transistors

YES

NE651R479A-A by Renesas Electronics

NE651R479A-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

2.5 W

Other Transistors

YES

NE68019-T1-A by Renesas Electronics

NE68019-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;

.035 A

SINGLE

80

1

150 Cel

NPN

.1 W

Other Transistors

YES

NE68039-T1-A by Renesas Electronics

NE68039-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 50;

.035 A

SINGLE

50

1

150 Cel

NPN

.2 W

Other Transistors

YES

2SC5015-A by Renesas Electronics

2SC5015-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

2SC5015-T1-A by Renesas Electronics

2SC5015-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

2SJ599(0)-Z-E1-AZ by Renesas Electronics

2SJ599(0)-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

35 W

Other Transistors

YES

2SJ599(0)-Z-E2-AZ by Renesas Electronics

2SJ599(0)-Z-E2-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 20 A;

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

35 W

Other Transistors

YES

2SJ690-T1B-AT by Renesas Electronics

2SJ690-T1B-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 2.5 A;

SINGLE

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.25 W

Other Transistors

YES

NE5820M53-T1-A by Renesas Electronics

NE5820M53-T1-A

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

METAL-OXIDE SEMICONDUCTOR

1

DEPLETION MODE

150 Cel

P-CHANNEL

Other Transistors

YES

2SC4783-T1-A by Renesas Electronics

2SC4783-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

90

e6

1

150 Cel

NPN

.2 W

Other Transistors

YES

TIN BISMUTH

150 MHz

2SC4942-T1-AZ by Renesas Electronics

2SC4942-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

SINGLE

30

1

150 Cel

NPN

2 W

Other Transistors

YES

UPA1950TE-T1-AT by Renesas Electronics

UPA1950TE-T1-AT

Renesas Electronics

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 2.5 A;

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

e3

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

1.15 W

Other Transistors

YES

MATTE TIN

NE3520S03-A by Renesas Electronics

NE3520S03-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 125 Cel;

JUNCTION

125 Cel

N-CHANNEL

.165 W

Other Transistors

YES

NE3513M04-A by Renesas Electronics

NE3513M04-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

125 Cel

N-CHANNEL

.125 W

Other Transistors

YES