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Fairchild Semiconductor Other Function Transistors 9

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2N5952-D74Z by Fairchild Semiconductor

2N5952-D74Z

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION;

JUNCTION

e3

150 Cel

N-CHANNEL

.35 W

Other Transistors

NO

Matte Tin (Sn)

BD243CTU by Fairchild Semiconductor

BD243CTU

Fairchild Semiconductor

BD243CTU by Fairchild Semiconductor is an NPN transistor with a max power dissipation of 65W and max collector current of 6A. With a min DC current gain of 15, it operates up to 150°C making it suitable for various applications in electronics circuits.

6 A

SINGLE

15

e3

1

150 Cel

NPN

65 W

Other Transistors

NO

Matte Tin (Sn)

FDC602P-F095 by Fairchild Semiconductor

FDC602P-F095

Fairchild Semiconductor

FDC602P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 5.5A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic circuits requiring high-power switching capabilities.

SINGLE

5.5 A

5.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES

FDN360P-NBGT003B by Fairchild Semiconductor

FDN360P-NBGT003B

Fairchild Semiconductor

FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.

SINGLE

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.5 W

Other Transistors

YES

Tin (Sn)

30

FQD8P10TM-SB82052 by Fairchild Semiconductor

FQD8P10TM-SB82052

Fairchild Semiconductor

Fairchild Semiconductor's FQD8P10TM-SB82052 is a P-CHANNEL MOSFET with 6.6A max drain current and 44W power dissipation. Ideal for enhancement mode applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities in compact designs.

SINGLE

6.6 A

6.6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

44 W

Other Transistors

YES

FDMC4435BZ-F126 by Fairchild Semiconductor

FDMC4435BZ-F126

Fairchild Semiconductor

FDMC4435BZ-F126 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 18A max drain current and 31W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as power supplies and motor control systems.

SINGLE

18 A

18 A

METAL-OXIDE SEMICONDUCTOR

e4

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

31 W

Other Transistors

YES

NICKEL PALLADIUM GOLD

30

NDS9407-G by Fairchild Semiconductor

NDS9407-G

Fairchild Semiconductor

Fairchild Semiconductor's NDS9407-G is a P-CHANNEL FET with 3A max drain current and 2.5W power dissipation. Ideal for applications requiring single-channel enhancement mode transistors, it operates at up to 175°C, making it suitable for high-temperature environments.

SINGLE

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

P-CHANNEL

2.5 W

Other Transistors

YES

MATTE TIN

30

FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.

SINGLE

.46 A

.46 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.35 W

Other Transistors

YES

FDC640P_F095 by Fairchild Semiconductor

FDC640P_F095

Fairchild Semiconductor

FDC640P_F095 by Fairchild Semiconductor is a P-CHANNEL transistor with 4.5A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES