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8.3 W Other Function Transistors 1

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
PMDPB65UP,115 by NXP Semiconductors

PMDPB65UP,115

NXP Semiconductors

PMDPB65UP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET ideal for power management applications. It supports a max drain current of 3.5 A and power dissipation of 8.3 W, operating up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

3.5 A

3.5 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

8.3 W

Other Transistors

YES

TIN

30