8.3 W Other Function Transistors 1

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    • 10 A
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    • 12 A
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    • 150 A
    • 16 A
    • 18 A
    • 2 A
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    • 28 A
    • 3 A
    • 3.3 A
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    • 3.8 A
    • 30 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.7 A
    • 4.9 A
    • 40 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 6.6 A
    • 7 A
    • 7.5 A
    • 75 A
    • 8 A
    • 8.5 A
    • 9 A
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
PMDPB65UP,115 by NXP Semiconductors

PMDPB65UP,115

NXP Semiconductors

PMDPB65UP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET ideal for power management applications. It supports a max drain current of 3.5 A and power dissipation of 8.3 W, operating up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

3.5 A

3.5 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

8.3 W

Other Transistors

YES

TIN

30

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