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6.25 W Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
PMN34UP,115 by NXP Semiconductors

PMN34UP,115

NXP Semiconductors

PMN34UP,115 by NXP Semiconductors is a P-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 5 A and power dissipation of 6.25 W, operating up to 150 °C. Ideal for surface mount configurations in various electronic circuits.

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

6.25 W

Other Transistors

YES

TIN

30

PMFPB8040XP,115 by NXP Semiconductors

PMFPB8040XP,115

NXP Semiconductors

NXP Semiconductors' PMFPB8040XP,115 is a P-CHANNEL FET with 3.7A max drain current and 6.25W power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices requiring high-power handling capabilities.

SINGLE

3.7 A

3.7 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

6.25 W

Other Transistors

YES

TIN

30