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20 W Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2SJ681(Q) by Toshiba

2SJ681(Q)

Toshiba

Toshiba's 2SJ681(Q) is a P-CHANNEL transistor with max drain current of 5A and power dissipation of 20W. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

20 W

Other Transistors

NO

2SC3074-O(Q) by Toshiba

2SC3074-O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

5 A

SINGLE

70

1

150 Cel

NPN

20 W

Other Transistors

YES

2SC3074-Y(Q) by Toshiba

2SC3074-Y(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 120;

5 A

SINGLE

120

1

150 Cel

NPN

20 W

Other Transistors

YES