2.3 W Other Function Transistors 1

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Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
NTLUS3A39PZCTBG by Onsemi

NTLUS3A39PZCTBG

Onsemi

NTLUS3A39PZCTBG by Onsemi is a P-CHANNEL transistor with 5.2A max drain current and 2.3W max power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150 °C, such as power management systems or industrial control circuits.

SINGLE

5.2 A

5.2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2.3 W

Other Transistors

YES

TIN

30

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