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1.8 W Other Function Transistors 4

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BSP92P-E6327 by Infineon Technologies

BSP92P-E6327

Infineon Technologies

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .26 A;

SINGLE

.26 A

.26 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP315P-E6327 by Infineon Technologies

BSP315P-E6327

Infineon Technologies

BSP315P-E6327 by Infineon is a P-CHANNEL transistor with 1.17A max drain current and 1.8W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management in compact designs.

SINGLE

1.17 A

1.17 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP317P-E6327 by Infineon Technologies

BSP317P-E6327

Infineon Technologies

BSP317P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.43A and power dissipation of 1.8W. It operates in enhancement mode, suitable for surface mount applications in temperatures up to 150°C. Ideal for compact electronic devices requiring efficient power management.

SINGLE

.43 A

.43 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP316P-E6327 by Infineon Technologies

BSP316P-E6327

Infineon Technologies

BSP316P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.68A and power dissipation of 1.8W. Ideal for enhancement mode operation in applications requiring high temperature tolerance up to 150°C, such as power management systems and automotive electronics.

SINGLE

.68 A

.68 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

235

P-CHANNEL

1.8 W

Other Transistors

YES