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1.15 W Other Function Transistors 1

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
UPA1950TE-T1-AT by Renesas Electronics

UPA1950TE-T1-AT

Renesas Electronics

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 2.5 A;

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

e3

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

1.15 W

Other Transistors

YES

MATTE TIN