Loading...

1.1 W Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2SC6142(Q) by Toshiba

2SC6142(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;

1.5 A

SINGLE

100

1

150 Cel

NPN

1.1 W

Other Transistors

NO

TTC008(Q) by Toshiba

TTC008(Q)

Toshiba

Toshiba's TTC008(Q) NPN transistor has a max power dissipation of 1.1W, hFE of 80, and IC of 1.5A. Ideal for applications requiring a single NPN configuration, with an operating temp up to 150°C.

1.5 A

SINGLE

80

1

150 Cel

NPN

1.1 W

Other Transistors

NO

TTC012(Q) by Toshiba

TTC012(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

2 A

SINGLE

80

1

150 Cel

NPN

1.1 W

Other Transistors

NO