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1 W Other Function Transistors 6

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
IRF7751TRPBF by International Rectifier

IRF7751TRPBF

International Rectifier

IRF7751TRPBF by International Rectifier is a P-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring high power efficiency and thermal performance.

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

1 W

Other Transistors

YES

MATTE TIN

30

SSM6J409TU(TE85L,F) by Toshiba

SSM6J409TU(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain Current (ID): 9.5 A; No. of Elements: 1;

SINGLE

9.5 A

9.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1 W

Other Transistors

YES

SSM3J129TU(TE85L) by Toshiba

SSM3J129TU(TE85L)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

SINGLE

4.6 A

4.6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1 W

Other Transistors

YES

2SA1483Y(TE12L,F) by Toshiba

2SA1483Y(TE12L,F)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

120

1

150 Cel

PNP

1 W

Other Transistors

YES

100 MHz

PMEM4030NS,115 by NXP Semiconductors

PMEM4030NS,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

NPN

1 W

Other Transistors

YES

100 MHz

PMEM4030PS,115 by NXP Semiconductors

PMEM4030PS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

PNP

1 W

Other Transistors

YES

100 MHz