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1 W Other Function Transistors 6

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
IRF7751TRPBF by International Rectifier

IRF7751TRPBF

International Rectifier

IRF7751TRPBF by International Rectifier is a P-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring high power efficiency and thermal performance.

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

1 W

Other Transistors

YES

MATTE TIN

30

SSM6J409TU(TE85L,F) by Toshiba

SSM6J409TU(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain Current (ID): 9.5 A; No. of Elements: 1;

SINGLE

9.5 A

9.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1 W

Other Transistors

YES

SSM3J129TU(TE85L) by Toshiba

SSM3J129TU(TE85L)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

SINGLE

4.6 A

4.6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1 W

Other Transistors

YES

2SA1483Y(TE12L,F) by Toshiba

2SA1483Y(TE12L,F)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

120

1

150 Cel

PNP

1 W

Other Transistors

YES

100 MHz

PMEM4030NS,115 by NXP Semiconductors

PMEM4030NS,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

NPN

1 W

Other Transistors

YES

100 MHz

PMEM4030PS,115 by NXP Semiconductors

PMEM4030PS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

PNP

1 W

Other Transistors

YES

100 MHz