.96 W Other Function Transistors 1

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    • .004 MHz
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    • .105 W
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    • .115 W
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    • 3 W
    • 3.1 W
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    • 3.57 W
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    • 30 W
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    • 4 W
    • 4.025 W
    • 4.03 W
    • 4.15 W
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    • 4.6 W
    • 4.8 W
    • 40 W
    • 400 W
    • 41 W
    • 41.5 W
    • 42 W
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    • 46 W
    • 46.8 W
    • 49 W
    • 5 W
    • 5.3 W
    • 5.4 W
    • 5.5 W
    • 5.68 W
    • 5.8 W
    • 50 W
    • 52 W
    • 54 W
    • 55 W
    • 56 W
    • 57 W
    • 57.2 W
    • 583 W
    • 6 W
    • 6.25 W
    • 6.9 W
    • 60 W
    • 62 W
    • 62.5 W
    • 620 W
    • 625 W
    • 63 W
    • 65 W
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    • 68 W
    • 7 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 71 W
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    • 770 W
    • 78 W
    • 8 W
    • 8.3 W
    • 8.33 W
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    • 8.7 W
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    • 80 W
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    • 9 W
    • 9.7 W
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    • .000001 A
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    • 1.8 A
    • 10 A
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    • 12 A
    • 13 A
    • 15 A
    • 150 A
    • 16 A
    • 18 A
    • 2 A
    • 2.4 A
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    • 2.6 A
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    • 20 A
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    • 24 A
    • 25 A
    • 28 A
    • 3 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.8 A
    • 30 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.7 A
    • 4.9 A
    • 40 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 6.6 A
    • 7 A
    • 7.5 A
    • 75 A
    • 8 A
    • 8.5 A
    • 9 A
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
IRF5810TRPBF by International Rectifier

IRF5810TRPBF

International Rectifier

IRF5810TRPBF by International Rectifier is a P-CHANNEL MOSFET with 2.9A max drain current and 0.96W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management.

2.9 A

2.9 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.96 W

Other Transistors

YES

MATTE TIN

30

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