Loading...

.4 W Other Function Transistors 5

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BFG10,215 by NXP Semiconductors

BFG10,215

NXP Semiconductors

BFG10,215 by NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.4 W, a min DC current gain (hFE) of 25, and operates up to 175 °C. Ideal for RF amplification in compact devices.

.25 A

SINGLE

25

e3

1

175 Cel

NPN

.4 W

Other Transistors

YES

Matte Tin (Sn)

MT3S20P(TE12L,F) by Toshiba

MT3S20P(TE12L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

100

1

150 Cel

NPN

.4 W

Other Transistors

YES

5000 MHz

J108,126 by NXP Semiconductors

J108,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J110,126 by NXP Semiconductors

J110,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J111,126 by NXP Semiconductors

J111,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO