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.4 W Other Function Transistors 5

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFG10,215 by NXP Semiconductors

BFG10,215

NXP Semiconductors

BFG10,215 by NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.4 W, a min DC current gain (hFE) of 25, and operates up to 175 °C. Ideal for RF amplification in compact devices.

.25 A

SINGLE

25

e3

1

175 Cel

NPN

.4 W

Other Transistors

YES

Matte Tin (Sn)

MT3S20P(TE12L,F) by Toshiba

MT3S20P(TE12L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

100

1

150 Cel

NPN

.4 W

Other Transistors

YES

5000 MHz

J108,126 by NXP Semiconductors

J108,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J110,126 by NXP Semiconductors

J110,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J111,126 by NXP Semiconductors

J111,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO