.28 W Other Function Transistors 1

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    • .000001 A
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    • 10 A
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    • 12 A
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    • 16 A
    • 18 A
    • 2 A
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    • 28 A
    • 3 A
    • 3.3 A
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    • 3.8 A
    • 30 A
    • 4 A
    • 4.2 A
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    • 4.5 A
    • 4.7 A
    • 4.9 A
    • 40 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 6.6 A
    • 7 A
    • 7.5 A
    • 75 A
    • 8 A
    • 8.5 A
    • 9 A
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
NTZD3158PT1G by Onsemi

NTZD3158PT1G

Onsemi

NTZD3158PT1G by Onsemi is a P-CHANNEL FET with 0.43A max drain current and 0.28W max power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs needing efficient power management.

.43 A

.43 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.28 W

Other Transistors

YES

MATTE TIN

30

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