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.2 W Other Function Transistors 6

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
NE68039-T1-A by Renesas Electronics

NE68039-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 50;

.035 A

SINGLE

50

1

150 Cel

NPN

.2 W

Other Transistors

YES

2SC4783-T1-A by Renesas Electronics

2SC4783-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

90

e6

1

150 Cel

NPN

.2 W

Other Transistors

YES

TIN BISMUTH

150 MHz

HN1C03FU-A(TE85L,F) by Toshiba

HN1C03FU-A(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .3 A; Maximum Operating Temperature: 150 Cel;

.3 A

SINGLE

200

1

150 Cel

NPN

.2 W

Other Transistors

YES

2SC2812-5-TB-E by Onsemi

2SC2812-5-TB-E

Onsemi

The Onsemi 2SC2812-5-TB-E is an NPN transistor with a min DC current gain of 135. It has a max collector current of 0.15A and can operate at temperatures up to 150 °C. This surface-mount transistor is ideal for applications requiring low power dissipation in single configurations.

.15 A

SINGLE

135

e6

1

1

150 Cel

NPN

.2 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

BF357 by Texas Instruments

BF357

Texas Instruments

Texas Instruments' BF357 NPN transistor has a max power dissipation of 0.2W, operating temp of 150°C, and collector current of 0.05A. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its nominal transition frequency of 1.6MHz.

.05 A

SINGLE

1

150 Cel

NPN

.2 W

Other Transistors

NO

1.6 MHz

BFS460L6E6327 by Infineon Technologies

BFS460L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Moisture Sensitivity Level (MSL): 1;

.05 A

90

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

16000 MHz