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.15 W Other Function Transistors 13

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2SC4227-T1-A by Renesas Electronics

2SC4227-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 40;

.065 A

SINGLE

40

1

150 Cel

NPN

.15 W

Other Transistors

YES

NE696M01-T1-A by Renesas Electronics

NE696M01-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Minimum DC Current Gain (hFE): 80;

.03 A

SINGLE

80

1

150 Cel

NPN

.15 W

Other Transistors

YES

2SC5015-A by Renesas Electronics

2SC5015-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

2SC5015-T1-A by Renesas Electronics

2SC5015-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

2SA1312-BL(TE85L,F) by Toshiba

2SA1312-BL(TE85L,F)

Toshiba

Toshiba's 2SA1312-BL(TE85L,F) is a PNP transistor with max power dissipation of 0.15W, min DC current gain of 350, and max collector current of 0.1A. Ideal for applications requiring single configuration surface mount transistors in temperatures up to 125°C.

.1 A

SINGLE

350

1

125 Cel

PNP

.15 W

Other Transistors

YES

2SA1721-R(TE85L,F) by Toshiba

2SA1721-R(TE85L,F)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

30

1

150 Cel

PNP

.15 W

Other Transistors

YES

50 MHz

2SA2154MFV-GR(TPL3) by Toshiba

2SA2154MFV-GR(TPL3)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

SINGLE

200

1

150 Cel

PNP

.15 W

Other Transistors

YES

80 MHz

2SC3138-Y(TE85L,F) by Toshiba

2SC3138-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;

.05 A

SINGLE

120

1

125 Cel

NPN

.15 W

Other Transistors

YES

50 MHz

2SC3324-BL(TE85L,F) by Toshiba

2SC3324-BL(TE85L,F)

Toshiba

Toshiba's 2SC3324-BL(TE85L,F) is an NPN transistor with a max power dissipation of 0.15W, hFE of 350, and IC of 0.1A. Ideal for applications requiring a single configuration in surface mount setups, it can operate at temperatures up to 125°C efficiently.

.1 A

SINGLE

350

1

125 Cel

NPN

.15 W

Other Transistors

YES

SSM6P35FE(TE85L,F) by Toshiba

SSM6P35FE(TE85L,F)

Toshiba

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (Abs) (ID): .1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.15 W

Other Transistors

YES

SSM6L16FE(TE85L,F) by Toshiba

SSM6L16FE(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .1 A; Maximum Drain Current (Abs) (ID): .1 A;

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL AND P-CHANNEL

.15 W

Other Transistors

YES

SSM6P16FE(TE85L,F) by Toshiba

SSM6P16FE(TE85L,F)

Toshiba

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .1 A; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.15 W

Other Transistors

YES

2SC5087Y(TE85L,F) by Toshiba

2SC5087Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

120

1

125 Cel

NPN

.15 W

Other Transistors

YES

5000 MHz