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.1 W Other Function Transistors 12

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
NE58219-T1-A by Renesas Electronics

NE58219-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;

.06 A

SINGLE

60

1

125 Cel

NPN

.1 W

Other Transistors

YES

3000 MHz

NE68019-T1-A by Renesas Electronics

NE68019-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;

.035 A

SINGLE

80

1

150 Cel

NPN

.1 W

Other Transistors

YES

2SA2154CT-Y(TPL3) by Toshiba

2SA2154CT-Y(TPL3)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

120

1

150 Cel

PNP

.1 W

Other Transistors

YES

80 MHz

2SC5233-B(TE85L,F) by Toshiba

2SC5233-B(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

.5

1

125 Cel

NPN

.1 W

Other Transistors

YES

80 MHz

2SC6026CT-Y(TPL3) by Toshiba

2SC6026CT-Y(TPL3)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

120

1

150 Cel

NPN

.1 W

Other Transistors

YES

60 MHz

SSM3J16CT(TPL3) by Toshiba

SSM3J16CT(TPL3)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.1 W

Other Transistors

YES

EC3A03B-TL-H by Onsemi

EC3A03B-TL-H

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;

JUNCTION

1

150 Cel

N-CHANNEL

.1 W

Other Transistors

YES

EC3A04B-3-TL-H by Onsemi

EC3A04B-3-TL-H

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;

JUNCTION

1

150 Cel

N-CHANNEL

.1 W

Other Transistors

YES

EC3H02BA-TL-H by Onsemi

EC3H02BA-TL-H

Onsemi

EC3H02BA-TL-H by Onsemi is an NPN transistor with a single configuration, suitable for surface mount applications. It features a min DC current gain of 120 (hFE), max collector current of 0.07A (IC), and nominal transition frequency of 5000MHz (fT). Ideal for high-frequency circuit designs requiring low power dissipation up to 0.1W at temperatures up to 150 °C.

.07 A

SINGLE

120

1

1

150 Cel

NPN

.1 W

Other Transistors

YES

5000 MHz

2SC5095O(TE85L,F) by Toshiba

2SC5095O(TE85L,F)

Toshiba

Toshiba's 2SC5095O(TE85L,F) NPN transistor offers a max power dissipation of 0.1W, hFE of 80, and fT of 7000MHz. Ideal for applications requiring low collector current (0.015A), such as high-frequency amplification in surface-mount configurations up to 125°C.

.015 A

SINGLE

80

1

125 Cel

NPN

.1 W

Other Transistors

YES

7000 MHz

2SC5085Y(TE85L,F) by Toshiba

2SC5085Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

120

1

125 Cel

NPN

.1 W

Other Transistors

YES

5000 MHz

SSM3J15CT(TPL3) by Toshiba

SSM3J15CT(TPL3)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Drain Current (Abs) (ID): .1 A; Operating Mode: ENHANCEMENT MODE;

SINGLE

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.1 W

Other Transistors

YES