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.054 W Other Function Transistors 1

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BFG410W,135 by NXP Semiconductors

BFG410W,135

NXP Semiconductors

BFG410W,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.054 W, a min DC current gain (hFE) of 50, and operates up to 150 °C. Perfect for RF amplification in compact devices.

.012 A

SINGLE

50

e3

1

150 Cel

260

NPN

.054 W

Other Transistors

YES

TIN

30