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2 A Other Function Transistors 4

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BCP69-16/DG,115 by NXP Semiconductors

BCP69-16/DG,115

NXP Semiconductors

NXP Semiconductors' BCP69-16/DG,115 is a PNP transistor with max. power dissipation of 1.35W and max. collector current of 2A. With min. DC current gain of 100 and fT of 40MHz, it's ideal for high-frequency applications in surface-mount configurations up to 150°C operating temperature.

2 A

SINGLE

100

1

150 Cel

PNP

1.35 W

Other Transistors

YES

40 MHz

TTC012(Q) by Toshiba

TTC012(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

2 A

SINGLE

80

1

150 Cel

NPN

1.1 W

Other Transistors

NO

PMEM4030NS,115 by NXP Semiconductors

PMEM4030NS,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

NPN

1 W

Other Transistors

YES

100 MHz

PMEM4030PS,115 by NXP Semiconductors

PMEM4030PS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

PNP

1 W

Other Transistors

YES

100 MHz