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.1 A Other Function Transistors 17

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BC857BF-E6327 by Infineon Technologies

BC857BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 220;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BC860BF-E6327 by Infineon Technologies

BC860BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BC856S-E6433 by Infineon Technologies

BC856S-E6433

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 200;

.1 A

200

150 Cel

PNP

.25 W

Other Transistors

YES

BC858BL3-E6327 by Infineon Technologies

BC858BL3-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BC847BF-E6327 by Infineon Technologies

BC847BF-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;

.1 A

SINGLE

200

1

150 Cel

NPN

.25 W

Other Transistors

YES

NE856M02-T1-AZ by Renesas Electronics

NE856M02-T1-AZ

Renesas Electronics

NE856M02-T1-AZ by Renesas Electronics is an NPN transistor with a max power dissipation of 1.2W and min DC current gain of 50. It operates at a max temperature of 150°C, making it suitable for various applications requiring a single configuration surface mount transistor with a collector current of 0.1A.

.1 A

SINGLE

50

1

150 Cel

NPN

1.2 W

Other Transistors

YES

NE856M03-A by Renesas Electronics

NE856M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

80

1

150 Cel

NPN

.125 W

Other Transistors

YES

3000 MHz

NE678M04-T2-A by Renesas Electronics

NE678M04-T2-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 75;

.1 A

75

150 Cel

NPN

.205 W

Other Transistors

YES

2SA2154CT-Y(TPL3) by Toshiba

2SA2154CT-Y(TPL3)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

120

1

150 Cel

PNP

.1 W

Other Transistors

YES

80 MHz

2SA1312-BL(TE85L,F) by Toshiba

2SA1312-BL(TE85L,F)

Toshiba

Toshiba's 2SA1312-BL(TE85L,F) is a PNP transistor with max power dissipation of 0.15W, min DC current gain of 350, and max collector current of 0.1A. Ideal for applications requiring single configuration surface mount transistors in temperatures up to 125°C.

.1 A

SINGLE

350

1

125 Cel

PNP

.15 W

Other Transistors

YES

2SA1721-R(TE85L,F) by Toshiba

2SA1721-R(TE85L,F)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

30

1

150 Cel

PNP

.15 W

Other Transistors

YES

50 MHz

2SC3324-BL(TE85L,F) by Toshiba

2SC3324-BL(TE85L,F)

Toshiba

Toshiba's 2SC3324-BL(TE85L,F) is an NPN transistor with a max power dissipation of 0.15W, hFE of 350, and IC of 0.1A. Ideal for applications requiring a single configuration in surface mount setups, it can operate at temperatures up to 125°C efficiently.

.1 A

SINGLE

350

1

125 Cel

NPN

.15 W

Other Transistors

YES

2SC6026CT-Y(TPL3) by Toshiba

2SC6026CT-Y(TPL3)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

120

1

150 Cel

NPN

.1 W

Other Transistors

YES

60 MHz

2SC4783-T1-A by Renesas Electronics

2SC4783-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

90

e6

1

150 Cel

NPN

.2 W

Other Transistors

YES

TIN BISMUTH

150 MHz

MT3S113P(TE12L,F) by Toshiba

MT3S113P(TE12L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1.6 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

200

1

150 Cel

NPN

1.6 W

Other Transistors

YES

5500 MHz

BC857BTE6327 by Infineon Technologies

BC857BTE6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BC847BTE6327 by Infineon Technologies

BC847BTE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

200

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES