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.012 A Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BFP405F-E6327 by Infineon Technologies

BFP405F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;

.012 A

SINGLE

50

1

1

150 Cel

260

NPN

.055 W

Other Transistors

YES

18000 MHz

BFG410W,135 by NXP Semiconductors

BFG410W,135

NXP Semiconductors

BFG410W,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.054 W, a min DC current gain (hFE) of 50, and operates up to 150 °C. Perfect for RF amplification in compact devices.

.012 A

SINGLE

50

e3

1

150 Cel

260

NPN

.054 W

Other Transistors

YES

TIN

30