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94 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FB20R06W1E3B11HOMA1 by Infineon Technologies

FB20R06W1E3B11HOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 29 A; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

29 A

600 V

COMPLEX

6.5 V

20 V

R-XUFM-X22

7

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

94 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

250 ns

37 ns

2 V

FP06R12W1T4B3BOMA1 by Infineon Technologies

FP06R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Nominal Turn Off Time (toff): 565 ns;

ISOLATED

12 A

1200 V

COMPLEX

6.4 V

20 V

R-XUFM-X20

6

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

94 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

565 ns

95 ns

2.25 V

FGAF40S65AQ by Onsemi

FGAF40S65AQ

Onsemi

FGAF40S65AQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 94W power dissipation. Ideal for general purpose switching applications, it features a built-in diode, 30.3ns turn on time, and -55 to 175°C operating temperature range.

ISOLATED

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6.6 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

94 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

90.8 ns

30.3 ns

2.1 V

LGD8209TI by Littelfuse

LGD8209TI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Transistor Application: AUTOMOTIVE IGNITION;

COLLECTOR

12 A

445 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON