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882 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AFGY160T65SPD-B4 by Onsemi

AFGY160T65SPD-B4

Onsemi

AFGY160T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.05V and a max IC of 240A. Ideal for power control applications, it has a max operating temperature of 175 °C and a collector-emitter voltage of 650V.

240 A

650 V

SINGLE WITH BUILT-IN DIODE

6.3 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

882 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

2.05 V

AFGY120T65SPD-B4 by Onsemi

AFGY120T65SPD-B4

Onsemi

AFGY120T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 1.85V and Max Collector-Emitter Voltage of 650V. Ideal for POWER CONTROL applications, it has a Nominal Turn Off Time of 247ns and can handle up to 240A of Max Collector Current (IC).

RC-IGBT

240 A

650 V

SINGLE WITH BUILT-IN DIODE

6.2 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

882 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

183 ns

1.85 V